Sr IGBT- Design Engineer / Device Engineer

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Desired areas of expertise:

MOSFET
IGBT
CMOS
Semiconductor
Device Design
Power device

The role is to provide further design capability at the RDC, Lincoln, to cover a wider range of IGBT products in the future. Products range from 600 to 6500v and current ratings up to 200A. 

 

A thorough knowledge of one or more of the following design technologies is required; trench gate, injection enhancement, reverse conducting and reverse blocking IGBTs. Design for reliability and robustness is a key feature of the role with particular emphasis on SCSOA and RBSOA.A good understanding of IGBT applications is also necessary.


Responsibilities & Requirements:

Design and development of IGBT Power Electronic Devices; comprising:       Device and process TCAD simulations. Design and layout of device masks       Electrical performance testing. Characterisation and analysis of components       Providing data analysis and solutions

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